Umberto Ravaioli

Description

Address

  • 3255 Beckman Institute
  • 405 North Mathews Avenue
  • Urbana, Illinois 61801

Biography

Umberto Ravaioli received a Laurea in Electronics Engineering in 1980 and a Laurea in Physics in 1982, both from the University of Bologna, and a Ph.D. in Electrical Engineering in 1986 from Arizona State University. He is a Professor in the University of Illinois Department of Electrical and Computer Engineering. His research interests are in computational electronics, with emphasis on Monte Carlo methods for device simulation, transport in quantum nanostructures, simulation of conduction phenomena in biological ionic channels, properties of carbon nanotubes, and supercomputation.

Honors

Fellow, Institute of Physics (1999); Fellow, Institute of Electrical and Electronics Engineers (2003).

Research

Umberto Ravaioli is a member of the Computational Electronics group and his main research efforts are in the area of transport simulation in nanostructures. His group has developed self-consistent 2-D and 3-D Monte Carlo simulators for nanoscale silicon devices, which have been applied to the study of ultra-scaled conventional and double-gate MOSFETs and FinFETs. These simulation tools are being used by research groups at the major semiconductor companies, including Intel, Motorola and AMD. Methodologies for the quantum simulation of nanostructures are also pursued and have been merged with Monte Carlo simulation to formulate quantum corrections to extend the validity of semi-classical transport. Other projects involve the coupling of particle simulation with phonon transport for the evaluation of thermal limitation of ultra-scaled integrated circuits.

Recent efforts have been devoted to the development of simulation tools for the study of ionic transport in biological ion channels, building a hierarchical simulation infrastructure for multi-scale simulation, ranging from continuum to particle simulation. The goal is to develop understanding of artificial biomimetic structures designed to behave like biological one, to make possible the realization of new classes of nanoscale sensors and devices.

Professor Ravaioli's sources of research funding include NSF, SRC and ARO.

Publications

  • 2016
    • Park, K. H.; Martin, P. N.; Ravaioli, U., Electronic and Thermal Transport Study of Sinusoidally Corrugated Nanowires Aiming to Improve Thermoelectric Efficiency. Nanotechnology 2016, 27, (3), DOI:Artn 035401 10.1088/0957-4484/27/3/035401.
  • 2015
    • Park, K. H.; Mohamed, M.; Aksamija, Z.; Ravaioli, U., Phonon Scattering Due to Van Der Waals Forces in the Lattice Thermal Conductivity of Bi2Te3 Thin Films. Journal of Applied Physics 2015, 117, (1), DOI:Artn 015103 DOI:10.1063/1.4905294.

    • Mohamed, M.; Aksamija, Z.; Ravaioli, U., Coupled Electron and Thermal Transport Simulation of Self-Heating Effects in Junctionless Mosfet. 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Edison' 19) 2015, 647, DOI:Unsp 012026 10.1088/1742-6596/647/1/012026.
    • Park, K. H.; Mohamed, M.; Aksamija, Z.; Ravaioli, U., Phonon Scattering Due to Van Der Waals Forces in the Lattice Thermal Conductivity of Bi2Te3 Thin Films. Journal of Applied Physics 2015, 117, (1), DOI:Artn 015103 10.1063/1.4905294.
    • Park, K. H.; Martin, P. N.; Ravaioli, U., Enhancement of Thermoelectric Efficiency in Non-Uniform Semiconductor Nanowires. 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Edison' 19) 2015, 647, DOI:Unsp 012053 10.1088/1742-6596/647/1/012053.
  • 2014
    • Mohamed, M.; Aksamija, Z.; Vitale, W.; Hassan, F.; Park, K. H.; Ravaioli, U., A Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors. IEEE Transactions on Electron Devices 2014, 61, (4), 976-983, DOI: 10.1109/ted.2014.2306422.

  • 2013
    • Chen, Y. B.; Mohamed, M.; Jo, M.; Ravaioli, U.; Xu, R. M., Junctionless MOSGETs with Laterally Graded-Doping Channel for Analog/RF Applications. Journal of Computational Electronics 2013, 12, (4), 757-764, DOI: 10.1007/s10825-013-0478-3.

  • 2012
    • Ni, C. J.; Aksamija, Z.; Murthy, J. Y.; Ravaioli, U., Coupled Electro-Thermal Simulation of Mosfets. Journal of Computational Electronics 2012, 11, (1), 93-105.

    • Estrada, Z. J.; Dellabetta, B.; Ravaioli, U.; Gilbert, M. J., Phonon-Limited Transport in Graphene Pseudospintronic Devices. IEEE Electron Device Letters 2012, 33, (10), 1465-1467

  • 2011
    • Giusi, G.; Iannaccone, G.; Crupi, F.; Ravaioli, U., A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-Mosfet. IEEE Electron Device Letters 2011, 32, (7), 853-855.

  • 2010
    • Lee, K. I.; Toghraee, R.; Jakobsson, E.; Ravaioli, U., A Study of Brownian Dynamics Simulation for Ion Transport Through a Transmembrane Pore with a Molecular Adapter. Journal of Computational and Theoretical Nanoscience 2010, 7, (12), 2547-2554.

    • Ravaioli, U., A Special Issue on Nanoscale Simulation of Molecular and Biological Systems. Journal of Computational and Theoretical Nanoscience 2010, 7, (12), 2479-2480.

    • Toghraee, R.; Lee, K. I.; Papke, D.; Chiu, S. W.; Jakobsson, E.; Ravaioli, U., Simulation of Ion Conduction in alpha-Hemolysin Nanopores with Covalently Attached beta-Cyclodextrin Based on Boltzmann Transport Monte Carlo Model. Journal of Computational and Theoretical Nanoscience 2010, 7, (12), 2555-2567. 

    • Martin, P. N.; Aksamija, Z.; Pop, E.; Ravaioli, U., Reduced Thermal Conductivity in Nanoengineered Rough Ge and GaAs Nanowires. Nano Letters 2010, 10, (4), 1120-1124.

    • Toghraee, R.; Lee, K. I.; Ravaioli, U., Simulation of Ion Permeation in Biological Membranes. Computing in Science & Engineering 2010, 12, (2), 43-47.

  • 2009
    • Wang, H. L.; Toghraee, R.; Papke, D.; Cheng, X. L.; McCammon, J. A.; Ravaioli, U.; Sine, S. M., Single-Channel Current Through Nicotinic Receptor Produced by Closure of Binding Site C-Loop. Biophysical Journal 2009, 96, (9), 3582-3590.

    • Wang, H. L.; Toghraee, R.; Papke, D.; Cheng, X. L.; McCammon, J. A.; Ravaioli, U.; Sine, S. M., Single-Channel Current Through Nicotinic Receptor Produced by Closure of Binding Site C-Loop. Biophysical Journal 2009, 96, (9), 3582-3590.

    • Giusi, G.; Iannaccone, G.; Ravaioli, U., Time-dependent analysis of low V-DD program operation in double-gate SONOS memories by full-band Monte Carlo simulation. Journal of Applied Physics 2009, 106, (10), 104506.

  • 2008
    • Bi, X.; East, J. R.; Ravaioli, U.; Haddad, G. I., A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation. Solid-State Electronics 2008, 52, (5), 688-694.

    • Aksamija, Z.; Ravaioli, U., Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for Monte Carlo Device Simulation. CMES-Computer Modeling in Engineering & Sciences 2008, 37, (1), 45-63.

    • Giusi, G.; Iannaccone, G.; Mohamed, M.; Ravaioli, U., Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation. IEEE Electron Device Letters 2008, 29, (11), 1242-1244.

  • 2007
    • Godoy, A.; Ruiz, F.; Sampedro, C.; Gamiz, F.; Ravaioli, U., Calculation of the phonon-limited mobility in silicon gate all-around MOSFETs. Solid-State Electronics 2007, 51, (9), 1211-1215.

    • Ravaioli, U., Simulation of nanoscale electronic systems. In Advances in Computers, 2007; Vol. 71, pp 167-249.

  • 2006
    • Bi, X. C.; East, J. R.; Ravaioli, U.; Haddad, G. I., Analysis and design of Si terahertz transit-time diodes. Solid-State Electronics 2006, 50, (5), 889-896.

    • Guo, B. Z.; Ravaioli, U.; Staedele, M., Full band Monte Carlo calculations of velocity-field characteristics of wurtzite ZnO. Computer Physics Communications 2006, 175, (7), 482-486.

    • Kwon, H. I.; Ravaioli, U., Simulation of electronic/ionic mixed conduction in solid ionic memory devices. Microelectronics Journal 2006, 37, (10), 1047-1051.

    • Sotomayor, M.; van der Straaten, T. A.; Ravaioli, U.; Schulten, K., Electrostatic properties of the mechanosensitive channel of small conductance MscS. Biophysical Journal 2006, 90, (10), 3496-3510.

  • 2004
    • Guo, B., Ravaioli, U., and Song, D. (2004), "Properties of Wurtzite GaN MESFET Studied by Two-dimensional Full Band Monte Carlo approach,” Microelectronic Journal, 35, pp. 117.

    • Trellakis, A. and Ravaioli, U. (2004), "Directional Effects on Bound QuantumSstates for Trench Oxide Quantum Wires on (100)-silicon," Solid-State Electronics, 48, pp. 367.

  • 2003
    • Kathawala, G.A., Winstead, B., and Ravaioli, U. (2003), "Monte Carlo Simulation of Double-gate MOSFETs," IEEE Transactions on Electron Devices, 50, pp. 2467.

    • van der Straaten, T.A., Tang, J., Eisenberg, R.S., Ravaioli, U., and Aluru, N. (2003), "Simulating Ion Permeation Through the ompF porin ion Channel Using Three-dimensional Drift-diffusion Theory," Journal of Computational Electronics, 2, pp. 29.

    • Guan, D., Ravaioli, U., Giannetta, R.W., Hannan, M., Adesida, I., and Melloch, M.R. (2003), “Nonequilibrium Green’s Function Method for a Quantum Hall Device in a Magnetic Field,” Physical Review B, 67, pp. 205328.

    • Li, Y., Rotkin, S.V., and Ravaioli, U. (2003), "Electronic Response and Bandstructure Modulation of Carbon Nanotubes in a Transverse Electrical Field," Nano Letters, 3, pp. 183.

Press

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