Harley T. Johnson
- Title: Professor
- Group: Computational Multiscale Nanosystems
- Status: Beckman Part-time Faculty
- Home: Mechanical Science and Engineering
Harley Johnson received his Ph.D. in Engineering from Brown University in 1999. He received his M.Sc. in Applied Mathematics in 1998 and his M.Sc. in Solid Mechanics in 1996 from Brown University. Johnson received his B.E.S.M in Engineering Science and Mechanics from Georgia Tech in 1994. He is a Cannon Faculty Scholar and an Associate Professor in the Mechanical Science and Engineering Department. Harley is a part-time Beckman Institute faculty member in the Computational Multiscale Nanosystems group.
Faculty Fellow, NCSA, (2017-2018); Invited Professor, Université Joseph Fourier, Grenoble, France (2014-2015); Fulbright U.S. Scholar in France (2014-2015); Fellow, ASME (2012); Xerox Award for Faculty Research, UIUC College of Engineering (2011); Kritzer Faculty Scholar, Department of Mechanical Science and Engineering, UIUC (2010-present); Thomas J. R. Hughes Young Investigator Award, ASME (2010)
Cannon Faculty Scholar, Department of Mechanical Science and Engineering, UIUC (2006-2010); Cannon Faculty Scholar, Department of Mechanical and Industrial Engineering, UIUC (2003-2006); NSF Faculty Early Development (CAREER) Award (2001).
Professor Johnson studies micro- and nanomechanics of electronic materials, mechanics of nanostructures, materials behavior in microelectromechanical systems (MEMS), and the mechanics of photonic materials.
Johnson and his research group study the mechanics of quantum dots, including the effects of stress on their formation and properties, the development of stress in MEMS devices and microelectronic materials due to ion-bombardment processing, dislocations in electronic materials, the electrical properties of deformed carbon nanotubes, and nanoscale surface instabilities. They have developed new atomistic modeling methods to study nanotubes, quantum dots and electronic materials. Combining finite element analysis and nonlinear topology optimization methods, they have also designed optimized nanophotonic devices.
Johnson and his Beckman Institute colleague, Jonathan Freund, are investigating the atomistic origins of ion bombardment nanoscale surface instability. Professor Johnson is also working with Professor Rachel Goldman in the Department of Materials Science and Engineering at the University of Michigan to determine the origins of electronic states in semiconductor nanostructures.
- Choi W, Seabron E, Mohseni PK, Kim JD, Gokus T, Cernescu A, Pochet P, Johnson HT, Wilson WL, Li X. Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires. ACS Nano 2017;11(2):1530-1539.
- Mackay, K. K., J. B. Freund, and H. T. Johnson, Hydrogen recombination rates on silica from atomic-scale calculations. Journal of Physical Chemistry C, 120, 24137-24147, 2016.
- Lin, T.-W., L. P. Rowe, A. J. Kaczkowski, G. P. Horn, and H. T. Johnson, Polarized light emission from grain boundaries in photovoltaic silicon. Extreme Mechanics Letters, 9, 397-404, 2016.
- Lin, T.-W., L. P. Rowe, A. J. Kaczkowski, G. P. Horn, and H. T. Johnson, Polarization-resolved imaging for both photoelastic and photoluminescence characterization of photovoltaic silicon wafers. Experimental Mechanics, 56, 1339-1350, 2016.
- Das, K., J. B. Freund, and H. T. Johnson, Erosive-thermal transition in high-flux focused ion beam nanomachining of surfaces. Extreme Mechanics Letters, 7, 121-125, 2016.
- Chen, H.; Bhuiya, A. M.; Ding, Q.; Johnson, H. T.; Toussaint, K. C., Towards Do-It-Yourself Planar Optical Components Using Plasmon-Assisted Etching. Nature Communications 2016, 7, DOI:ARTN 10468 10.1038/ncomms10468.
- McGuigan, B. C.; Pochet, P.; Johnson, H. T., Critical Thickness for Interface Misfit Dislocation Formation in Two-Dimensional Materials. Physical Review B 2016, 93, (21), DOI:ARTN 214103 10.1103/PhysRevB.93.214103.
Lin, T. W.; Horn, G. P.; Johnson, H. T., Quantitative Infrared Photoelasticity of Silicon Photovoltaic Wafers Using a Discrete Dislocation Model. Journal of Applied Mechanics-Transactions of the ASME 2015, 82, (1), DOI:Artn 011001 Doi 10.1115/1.4028987.
Das, K.; Freund, J. B.; Johnson, H. T., Mechanisms of Material Removal and Mass Transport in Focused Ion Beam Nanopore Formation. Journal of Applied Physics 2015, 117, (8), DOI:Artn 085304 DOI:10.1063/1.4913449.
- Bronsgeest, M. S.; Bendiab, N.; Mathur, S.; Kimouche, A.; Johnson, H. T.; Coraux, J.; Pochet, P., Strain Relaxation in CVD Graphene: Wrinkling with Shear Lag. Nano Letters 2015, 15, (8), 5098-5104, DOI:10.1021/acs.nanolett.5b01246.
- Das, K.; Johnson, H. T.; Freund, J. B., Atomic-Scale Thermocapillary Flow in Focused Ion Beam Milling. Physics of Fluids 2015, 27, (5), DOI:Artn 052003 10.1063/1.4919782.
Das, K.; Freund, J. B.; Johnson, H. T., A Fib Induced Boiling Mechanism for Rapid Nanopore Formation. Nanotechnology 2014, 25, (3), DOI: 10.1088/0957-4484/25/3/035303.
Krishnan, D.; Johnson, H. T., Light-Induced Deformation in a Liquid Crystal Elastomer Photonic Crystal. Journal of the Mechanics and Physics of Solids 2014, 62, 48-56, DOI: 10.1016/j.jmps.2013.08.013.
Semichaevsky, A. V.; Johnson, H. T., Carrier Transport in a Quantum Dot Solar Cell Using Semiclassical and Quantum Mechanical Models. Solar Energy Materials and Solar Cells 2013, 108, 189-199.
Lin, T. W.; Elkhatib, O.; Makinen, J.; Palokangas, M.; Johnson, H. T.; Horn, G. P., Residual Stresses at Cavity Corners in Silicon-on-Insulator Bonded Wafers. Journal of Micromechanics and Microengineering 2013, 23, (9), DOI: 10.1088/0960-1317/23/9/095004.
Inzinga, R. A.; Lin, T. W.; Yadav, M.; Johnson, H. T.; Horn, G. P., Characterization and Control of Residual Stress and Curvature in Anodically Bonded Devices and Substrates with Etched Features. Experimental Mechanics 2012, 52, (6), 637-648.
Kim, S.; Su, Y.; Mihi, A.; Lee, S.; Liu, Z.; Bhandakkar, T. K.; Wu, J.; Geddes, J. B.; Johnson, H. T.; Zhang, Y. W.; Park, J. K.; Braun, P. V.; Huang, Y. G.; Rogers, J. A., Imbricate Scales as a Design Construct for Microsystem Technologies. Small 2012, 8, (6), 901-906.
Bhandakkar, T. K.; Johnson, H. T., Diffusion Induced Stresses in Buckling Battery Electrodes. Journal of the Mechanics and Physics of Solids 2012, 60, (6), 1103-1121.
Hossain, M. Z.; Das, K.; Freund, J. B.; Johnson, H. T., Ion Impact Crater Asymmetry Determines Surface Ripple Orientation. Applied Physics Letters 2011, 99, DOI: 10.1063/1.3650469.
Huang, S.; Semichaevsky, A. V.; Webster, L.; Johnson, H. T.; Goldman, R. S., Influence of Wetting Layers and Quantum Dot Size Distribution on Intermediate Band Formation in InAs/GaAs Superlattices. Journal of Applied Physics 2011, 110, DOI: 10.1063/1.3631785.
Dasika, V. D.; Semichaevsky, A. V.; Petropoulos, J. P.; Dibbern, J. C.; Dangelewicz, A. M.; Holub, M.; Bhattacharya, P. K.; Zide, J. M. O.; Johnson, H. T.; Goldman, R. S., Influence of Mn dopants on InAs/GaAs quantum dot electronic states. Applied Physics Letters 2011, 98, (14).
Semichaevsky, A. V.; Johnson, H. T.; Low, K. H.; Paul, D.; Chandra, A.; Bastawros, A., Focused Electric Field-Induced Ion Transport: Experiments and Modeling. Electrochemical and Solid State Letters 2010, 13, (12), D100-D103.
Kibey, S.; Wang, L.-L.; Liu, J.-B.; Johnson, H. T.; Sehitoglu, H.; Johnson, D. D., Quantitative prediction of twinning stresses in FCC alloys: application to Cu-Al. Physical Review B 2009, 79, 214202.
Hossain, M. Z.; Freund, J. B.; Johnson, H. T., Improved calculation of Si sputter yield via first principles derived interatomic potential. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 2009, 267, (7), 1061-1066.
Kalyanasundaram, N.; Freund, J. B.; Johnson, H. T., A multiscale crater function model for ion-induced pattern formation in silicon. Journal of Physics-Condensed Matter 2009, 21, (22).
Shir, D.; Liao, H. W.; Jeon, S.; Xiao, D.; Johnson, H. T.; Bogart, G. R.; Bogart, K. H. A.; Rogers, J. A., Three-dimensional nanostructures formed by single step, two-photon exposures through elastomeric Penrose quasicrystal phase masks. Nano Letters 2008, 8, (8), 2236-2244.
Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T., Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon. Journal of Applied Physics 2008, 104, (5).
Kalyanasundaram, N.; Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T. Single Impact Crater Functions for Ion Bombardment of Silicon. Appl. Phys. Lett. 2008, 92, 131909.
Hossain, M. Z.; Freund, J. B.; and Johnson, H. T. Differential Sputter Yields in Si1-xGex. J. Appl. Phys. 2008, 103, 073508.
Frei, W. R.; Choquette, K. D.; Johnson, H. T. Optimization of a Single Defect Photonic Crystal Laser Cavity. J. Appl. Phys. 2008, 103, 033102.
Frei, W. R.; Johnson, H. T.; Tortorelli, D. A., Optimization of photonic nanostructures. Computer Methods in Applied Mechanics and Engineering 2008, 197, (41-42), 3410-3416.
You, J.H.; Johnson, H. T. Effect of Threading Edge Dislocations on the Photoluminescence Spectrum in n-type Wurtzite GaN. Phys. Rev. B. 2007, 76, 115336.
Zhang, X.; Sharma, P.; Johnson, H. T. Quantum Confinement Induced Strain in Quantum Dots. Phys. Rev. B. 2007, 75, 155319.
Kalyanasundaram, N.; Moore, M. C.; Freund, J. B.; Johnson, H. T. Stress Evolution Due to Medium Energy Ion Bombardment of Silicon. Acta Mater. 2006, 54, 483-491.
Schuyler, A. D.; Chirikjian, G. S.; Lu, J.Q.; Johnson, H. T. Efficient Random Walk Statistics in Moments-based O(N) Tight-binding and Applications in Carbon Nanotubes. Phys. Rev. E. 2005, 71, 146701.
Frei, W. R.; Johnson,H. T. Finite Element Analysis of Disorder Effects in Photonic Crystals. Phys. Rev. B. 2004, 70, 165116.
Zhang, S.; Johnson, H. T.; Wagner, G. J.; Liu,W. K.; Hsia, K. J. Stress Generation Mechanisms in Carbon Thin Films Grown by Ion-beam Deposition. Acta Mater. 2003, 51, 5211-5222.
Bifano, T. G.; Johnson, H. T.; Bierden, P.; Mali,R. Elimination of Stress-induced Curvature in Thin-film Structures. Journal of Microelectromechanical Systems. 2002, 11, 592-597.
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