Jean-Pierre Leburton

Description

Address

  • 3251 Beckman Institute
  • 405 North Mathews Avenue
  • Urbana, Illinois 61801

Biography

Jean-Pierre Leburton received his Ph.D. from the University of Liege (Belgium) in 1978. He is the Gregory E. Stillman Professor of Electrical and Computer Engineering at the University of Illinois and a full-time faculty member in the Nanoelectronics and Nanomaterials group in the Beckman Institute. His fields of professional interest are semiconductor devices, nonlinear transport in semiconductors, electronic and optical properties of quantum nanostructures, quantum wires and quantum dots, spintronics in nanostructures, and bio-nanotechnology.

Honors

Fellow, Electrochemical Society (2005); Quantum Devices Award, Eudyna Corp. (2004); Fellow, AAAS (2001); Fellow of the Optical Society of America (2001); Associate, U of I Center for Advanced Study (1999); Fellow, American Physical Society(1999); Fellow, IEEE (1996); Member, New York Academy of Sciences (1996); Chevalier dans L'Ordre des Palmes Academiques, French Government (1993); Hitachi Ltd. Quantum Materials Chair, RCAST, University of Tokyo, Japan (1992); U. S. Patent #5,021,841 on "Semiconductor Devices with Controlled Negative Differential Resistance" (issued June 4, 1991); ESIS Fellowship, Belgian Government; Who's Who in the World, 9th and 10th Editions; Who's Who in American Education 5th &6th Edition; Who's Who in Science and Engineering, 4th & 5th Editions; American Men and Women of Science, 20th and 21st Editions; Who's Who in America, 58th Edition (2004); Gold Medal for Scientific Achievement, Alumnus Assoc., U of Liege, Belgium (2004), Fellow of the Center for Advanced Studies (CAS) at Illinois (2015).

Research

Jean-Pierre Leburton's research at the Beckman Institute deals with transport and optical processes in semiconductor nanostructures such as quantum wires and quantum dots that exhibit a high degree of quantization dependent on the semiconductor materials and geometrical confinement. This important property has far-reaching technological consequences as it creates new opportunities for making high performance electronic and photonic devices with non-conventional quantum mechanical principles of operation. More recently, Leburton's research has focused on the manipulation of spin effects in quantum nanostructures for applications in solid state quantum computing. He is also involved in the investigation of protein and DNA molecule transport in artificial silicon ion channels and the design of a novel nanoscale detector for DNA sequencing. His approach to these problems involves use of advanced numerical techniques such as three-dimensional self-consistent Schroedinger-Poisson modeling based on the density functional theory.

Leburton is interacting with R. Martin on modeling of quantum devices. He is presently collaborating with G. Timp, K. Shulten, A. Bezryadin and N. Aluru on bio-nanotechology.

Leburton's sources of research support include the NSF, ARO, DARPA, ONR and SRC.

Publications

  • 2015
    • Sekwao, S.; Leburton, J. P., Terahertz Harmonic Generation in Graphene. Applied Physics Letters 2015, 106, (6), DOI:Artn 063109 DOI:10.1063/1.4908293.

    • Girdhar, A.; Sathe, C.; Schulten, K.; Leburton, J. P., Tunable Graphene Quantum Point Contact Transistor for DNA Detection and Characterization. Nanotechnology 2015, 26, (13), DOI:Artn 134005 DOI:10.1088/0957-4484/26/13/134005.

  • 2014
    • Zeng, H.; Zhao, J.; Leburton, J. P.; Wei, J. W., Vacancy-Induced Intramolecular Junctions and Quantum Transport in Metallic Carbon Nanotubes. Journal of Physical Chemistry C 2014, 118, (40), 22984-22990, DOI: 10.1021/Jp508159x.

    • Sathe, C.; Girdhar, A.; Leburton, J. P.; Schulten, K., Electronic Detection of dsDNA Transition from Helical to Zipper Conformation Using Graphene Nanopores. Nanotechnology 2014, 25, (44), DOI:Artn 445105 DOI:10.1088/0957-4484/25/44/445105.

    • Lu, S. C.; Leburton, J. P., Electronic Structures of Defects and Magnetic Impurities in MoS2 Monolayers. Nanoscale Research Letters 2014, 9, DOI:Artn 676 DOI 10.1186/1556-276x-9-676.

    • Leburton, J. P.; Di Ventra, M., Introduction for Solid State Membranes for Bio-Molecules Sensing and Manipulation. Journal of Computational Electronics 2014, 13, (4), 779-780, DOI: 10.1007/s10825-014-0629-1.

    • Girdhar, A.; Sathe, C.; Schulten, K.; Leburton, J. P., Gate-Modulated Graphene Quantum Point Contact Device for DNA Sensing. Journal of Computational Electronics 2014, 13, (4), 839-846, DOI: 10.1007/s10825-014-0596-6.

  • 2013
    • Girdhar, A.; Sathe, C.; Schulten, K.; Leburton, J. P., Graphene Quantum Point Contact Transistor for DNA Sensing. Proceedings of the National Academy of Sciences of the United States of America 2013, 110, (42), 16748-16753, DOI: 10.1073/pnas.1308885110.

    • Moon, P.; Yoon, E.; Choi, W. J.; Lee, J. D.; Leburton, J. P., Strained Quantum Rings, In Physics of Quantum Rings. Fomin, V., Ed.; Springer, Series Nanoscience and Technology, 2013, 331-352.

    • Sanchez, A. X.; Leburton, J. P., Temperature Modulation of the Transmission Barrier in Quantum Point Contacts. Physical Review B 2013, 88, (7), DOI: 10.1103/PhysRevB.88.075305.

    • Sekwao, S.; Leburton, J. P., Electrical Tunability of Soft Parametric Resonance by Hot Electrons in Graphene. Applied Physics Letters 2013, 103, (14), DOI: 10.1063/1.4823825.

    • Sekwao, S.; Leburton, J. P., Soft Parametric Resonance for Hot Carriers in Graphene. Physical Review B 2013, 87, (15).

    • Taghavi, I.; Kaatuzian, H.; Leburton, J. P., A Nonlinear Gain Model for Multiple Quantum Well Transistor Lasers. Semiconductor Science and Technology 2013, 28, (2).

    • Taghavi, I.; Kaatuzian, H.; Leburton, J. P., Performance Optimization of Multiple Quantum Well Transistor Lasers. IEEE Journal of Quantum Electronics 2013, 49, 426-435.

    • Zeng, H.; Zhao, J.; Wei, J.; Leburton, J. P., Structural Defects on the Electronic Transport Properties of Carbon-Based Nanostructures, In Topological Modelling of Nanostructures and Extended Systems, Carbon Materials: Chemistry and Physics 7. Ashrafi, A. R., Ed. Springer Science & Business Media Dordrecht, 2013, 77-103.

  • 2012
    • Taghavi, I.; Kaatuzian, H.; Leburton, J.-P., Bandwidth Enhancement and Optical Performances of Multiple Quantum Well Transistor Lasers. Applied Physics Letters 2012, 100, 231114.

    • Melnikov, D. V.; Leburton, J. P.; Gracheva, M. E., Slowing Down and Stretching out DNA with an Electrically Tunable Nanopore in a p-n Membrane. Nanotechnology 2012, 23, 255501.

    • Zeng, H.; Zhao, J.; Wei, J. W.; Xu, D. H.; Leburton, J. P., Modulation of Electric Behavior by Position-Dependent Substitutional Impurity in Zigzag-Edged Graphene Nanoribbon. Computational Materials Science 2012, 60, 234-238.

    • DeSousa, J.; Leburton, J. P., Self-Consistent Quantum Mechanical Analysis of Nanocrystal Flash Memory Operation, In Nonvolatile Memories: Materials, Devices and Applications. Tseng, T. Y., Sze, S. M., Eds. American Scientific Publishers, 2012; Vol. 1, 1-12.

    • Mehnikov, D. V.; Nikolaev, A.; Leburton, J. P.; Gracheval, M. E., Polymer Translocation through an Electrically Tunable Nanopore in a Multilayered Semiconductor Membrane, In Nanopore-Based Technology: Single Molecule Characterization and DNA Sequencing. Humana Press, 2012, 187-210.

    • Pirro, L.; Girdhar, A.; Leblebici, Y.; Leburton, J. P., Impact Ionization and Carrier Multiplication in Graphene. Journal of Applied Physics 2012, 112, (9).

    • Zeng, H.; Zhao, J.; Wei, J. W.; Xu, D. H.; Leburton, J. P., Controllable Tuning of the Electronic Transport in Pre-Designed Graphene Nanoribbon. Current Applied Physics 2012, 12, (6), 1611-1614.

  • 2011
    • Sathe, C.; Zou, X. Q.; Leburton, J. P.; Schulten, K., Computational Investigation of DNA Detection Using Graphene Nanopores. ACS Nano 2011, 5, (11), 8842-8851.

    • Scott, B. W.; Leburton, J. P., Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors. IEEE Transactions on Nanotechnology 2011, 10, (5), 1113-1119.

    • Girdhar, A.; Leburton, J. P., Soft Carrier Multiplication by Hot Electrons in Graphene. Applied Physics Letters 2011, 99, DOI: 10.1063/1.3615286.

    • Gracheva, M. E.; Leroux, A.; Destine, J.; Leburton, J. P. Simulation of Electronic Sensing of Biomolecules in Translocation through a Nanopore in a Semiconductor Membrane, 2011, 151-175.

    • de Sousa, J. S.; Peibst, R.; Erenburg, M.; Bugiel, E.; Farias, G. A.; Leburton, J. P.; Hofmann, K. R., Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memories. IEEE Transactions on Electron Devices 2011, 58, (2), 376-383. 

    • Melnikov, D. V.; Leburton, J. P., Engineering of Exchange Interactions in Electrostatic Quantum Dots for Information Processing. Journal of Computational and Theoretical Nanoscience 2011, 8, (3), 449-463.

    •  Salehi-Khojin, A.; Khalili-Araghi, F.; Kuroda, M. A.; Lin, K. Y.; Leburton, J. P.; Masel, R. I., On the Sensing Mechanism in Carbon Nanotube Chemiresistors. ACS Nano 2011, 5, (1), 153-158.

    • Scott, B. W.; Leburton, J. P., Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors. IEEE-Transistor Nanotechnology 2011

    • Sekwao, S.; Leburton, J. P., Hot-electron transient and terahertz oscillations in graphene. Physical Review B 2011, 83, (7). 

    • Zeng, H.; Leburton, J. P.; Hu, H. F.; Wei, J. W., Vacancy cluster-limited electronic transport in metallic carbon nanotube. Solid State Communications 2011, 151, (1), 9-12. 

    • Zeng, H.; Leburton, J. P.; Xu, Y.; Wei, J. W., Defect symmetry influence on electronic transport of zigzag nanoribbons. Nanoscale Research Letters 2011, 6. 

    • Zeng, H.; Zhao, J.; Hu, H. F.; Leburton, J. P., Atomic vacancy defects in the electronic properties of semi-metallic carbon nanotubes. Journal of Applied Physics 2011, 109, (8). 

    • Zeng, H.; Leburton, J. P.; Xu, Y.; Wei, J. W., Defect Symmetry Influence on Electronic Transport of Zigzag Nanoribbons. Nanoscale Research Letters 2011, 6, DOI: 10.1186/1556-276x-6-254.

  • 2010
    • Zheng, H.; Hu, H. F.; Leburton, J. P., Chirality effects in Atomic Vacancy-Limited transport in metallic carbon nanotubes. ACS Nano 2010, 4, (1), 292-296. 

    • Scott, B. W.; Leburton, J. P. High Field Carrier Velocity and Current Saturation in Graphene Field-effect Transistors, 10th IEEE Conference on Nanotechnology, 2010; pp 655-658. 

    • de Sousa, J. S.; Peibst, R.; Farias, G. A.; Leburton, J. P.; Hofmann, K. R., Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories. Applied Physics Letters 2010, 97, (1). 

    • Bartic, C.; Chan, M. S.; Fromherz, P.; Judy, J. W.; Kan, E. C.; Leburton, J. P.; Li, J.; Misra, V.; Reed, M. A.; Timp, G. L., Introduction to the Special Section on Electronic and Ionic Interfaces to Biomolecules and Cells. IEEE Transactions on Nanotechnology 2010, 9, (3), 268-268.

    • Leroux, A.; Destine, J.; Vanderheyden, B.; Gracheva, M. E.; Leburton, J. P., SPICE Circuit Simulation of the Electrical Response of a Semiconductor Membrane to a Single-Stranded DNA Translocating Through a Nanopore. IEEE Transactions on Nanotechnology 2010, 9, (3), 322-329.

    • Zeng, H.; Hu, H. F.; Leburton, J. P., Chirality Effects in Atomic Vacancy-Limited Transport in Metallic Carbon Nanotubes. ACS Nano 2010, 4, (1), 292-296.

  • 2009
    • Melnikov, D. V.; Leburton, J. P., Self-consistent simulation of quantum dot spin transistor. In Encyclopedia of Complexity and Systems Science, Meyers, R. A., Ed. Springer: New York, NY, 2009; p 435.

    • Melnikov, D. V.; Leburton, J. P., Few-electron Quantum Dot Spintronics. In Frontiers in Nanoscience and Nanotechnology, Narlikar, V.; Fu, Y., Eds. Oxford University Press: UK, 2009; Vol. 3, pp 47-89.

    • Zhang, L. X.; Melnikov, D. V.; Leburton, J. P., Non-monotonic variation of the exchange energy in double elliptic quantum dots. Journal of Physics-Condensed Matter 2009, 21, (9).

    • Kim, J.; Melnikov, D. V.; Leburton, J. P., Tunable many-body effects in triple quantum dots. Physical Review B 2009, 80, (4), DOI: 10.1103/PhysRevB.80.045305.

    • Kuroda, M. A.; Leburton, J. P., High-field electrothermal transport in metallic carbon nanotubes. Physical Review B 2009, 80, (16), DOI: 10.1103/PhysRevB.80.165417.

    • Kuroda, M. A.; Leburton, J. P., Self-Consistent Simulation of Electrical Nonlinearities and Thermal Transport in Metallic Carbon Nanotubes. Journal of Computational and Theoretical Nanoscience 2009, 6, (8), 1937-1947.

    • Moon, P.; Park, K.; Yoon, E.; Leburton, J. P., Anomalous strain relaxation and light-hole character enhancement in GaAs capped InAs/In0.53Ga0.47As quantum ring. Physica Status Solidi-Rapid Research Letters 2009, 3, (2-3), 76-78.

    • Moon, P.; Yoon, E. J.; Sheng, W. D.; Leburton, J. P., Anisotropic enhancement of piezoelectricity in the optical properties of laterally coupled InAs/GaAs self-assembled quantum dots. Physical Review B 2009, 79, (12).

    • Zhang, L.; Leburton, J. P., Modeling of the transient response of heterojunction transistor lasers. IEEE Journal of Quantum Electronics 2009, 45, 359-366.

  • 2008
    • Zhang, L. X.; Melnikov, D. V.; Agarwal, S.; Leburton, J. P., Size effects in the exchange coupling between two electrons confined in quantum wire quantum dots. Physical Review B 2008, 78, (3).

    • Zhang, L. X.; Melnikov, D. V.; Leburton, J. P., von Neumann-Wigner theorem in quantum dot molecules. Physical Review B 2008, 78, (8).

    • Kim, J.; Melnikov, D. V.; Leburton, J. P., Coupled quantum dots as two –level system: A variational Monte Carlo Approach. The Open Condensed Matter Physics Journal 2008, 1, 1-6.

    • Melnikov, D. V.; Fujisawa, T.; Austing, D. G.; Tarucha, S.; Leburton, J. P., Many-body excitations in the tunneling current spectra of a few-electron quantum dot. Physical Review B 2008, 77, (16).

    • Gracheva, M. E.; Melnikov, D. V.; Leburton, J. P., Multilayered Semiconductor Membranes for Nanopore Ionic Conductance Modulation. ACS Nano 2008, 2, (11), 2349-2355.

    • Kuroda, M. A.; Leburton, J. P., Restricted Wiedemann-Franz Law and Vanishing Thermoelectric Power in One-Dimensional Conductors. Physical Review Letters 2008, 101, (25).

    • de Sousa, J. S.; Farias, G. A.; Leburton, J. P., Light-induced programming of Si nanocrystal flash memories. Applied Physics Letters 2008, 92, (10).

  • 2007
    • Gracheva, M. E.; Leburton, J. P., Simulation of Electrically tunable semiconductor nanopores for ion current/single bio-molecule manipulation. Journal of Computational Electroncis 2007, 7, 6-9.

    • Zhang, L. X.; Melnikov, D. V.; Leburton, J. P., Engineering exchange coupling in double elliptic quantum dots. IEEE Transactions on Nanotechnology 2007, 6, (2), 250-255.

    • Nawaz, M.; Leburton, J. P.; Jin, J., Hole scattering by confined optical phonons in silicon nanowires. Applied Physics Letters 2007, 90, 183505. Also in the May 14, 2007 issue of Virtual Journal of Nanoscale Science & Technology.

    • de Sousa, J. S.; Freire, V. N.; Leburton, J. P., Hole vs. electron-based operation in nanocrystal non-volatile memories. Applied Physics Letters 2007, 90, 223504; also in the June 11, 2007 issue of Virtual Journal of Nanoscale Science & Technology.

    • Gracheva, M. E.; Leburton, J. P., Electrolytic charge inversion at the liquid-solid interface in a nanopore in a doped semiconductor membrane. Nanotechnology 2007, 18, (14), 145704.

    • Gracheva, M.; Leburton, J. P., p-n semiconductor membrane for electrically tunable ion current rectification and filtering. Nano Letters 2007, 7, 1717-1722.

  • 2006
    • Kim, J.; Matagne, P.; Leburton, J. P.; Martin, R. M.; Hatano, T.; Tarucha, S., Engineering quantum confinement and orbital couplings in laterally coupled vertical quantum dots for spintronic applications. IEEE Transactions on Nanotechnology 2006, 5, (4), 343-349.

    • Kim, J.; Melnikov, D. V.; Leburton, J. P.; Austing, D. G.; Tarucha, S., Spin charging sequences in three colinear laterally coupled vertical quantum dots. Physical Review B 2006, 74, (3).

    • Kuroda, M. A.; Leburton, J. P., Joule heating induced negative differential resistance in freestanding metallic carbon nanotubes. Applied Physics Letters 2006, 89, (10).

    • Vidal, J.; Gracheva, M.; Leburton, J. P., Electrically tunable solid-state silicon nanopore ion filter. Nanoscale Research Letters 2006, 2, 61-68.

    • Tehranchi, F.; Leburton, J. P.; Thean, A., A double gate metal-oxide-semiconductor structure for modulation of the hyperfine interaction in phosphorous-doped Si device. Journal of Applied Physics 2006, 100, (12).

    • Melnikov, D. V.; Leburton, J. P., Single-particle state mixing in two-electron double quantum dots. Physical Review B 2006, 73, (15).

    • Melnikov, D. V.; Leburton, J. P.; Taha, A.; Sobh, N., Coulomb localization and exchange modulation in two-electron coupled quantum dots. Physical Review B 2006, 74, (4).

    • Melnikov, D. V.; Zhang, L. A.; Leburton, J. P., Exchange coupling between two electrons in double quantum dot structures. Current Opinion in Solid State & Materials Science 2006, 10, (2), 114-119.

    • Zhang, L. X.; Melnikov, D. V.; Leburton, J. P., Exchange interaction and stability diagram of coupled quantum dots in magnetic fields. Physical Review B 2006, 74, (20).

    • Moon, P.; Lee, Y.; Ahn, E.; Kim, J.; Yang, C.; Lee, G.; Yoon, E.; Leburton, J. P., Enhanced piezoelectric effects in three-dimensionally coupled self-assembled quantum dot structures. Electronic Materials Letters 2006, 2.

    • Austing, D. G.; Yu, G.; Melnikov, D. V.; Leburton, J. P.; Tarucha, S., Few-electron spin and charge configurations in circular and rectangular vertical quantum dot mesas in a magnetic field: Experiment and full three-dimensional self-consistent simulations. Physica E-Low-Dimensional Systems & Nanostructures 2006, 32, (1-2), 395-398.

  • 2004
    • Ravishankar, R., Matagne, P., Leburton, J.P., Martin, R.M. and Tarucha, S., (2004), "3D Self-Consistent Simulation of Symmetric and Asymmetric Laterally Coupled Vertical Quantum Dots." Physical Review B, 69, p. 035326.

  • 2003
    • Matagne, P and Leburton J.P., (2003), "Quantum Dots: Artificial Atoms and Molecules," in S. Bandyopadhayay and H.S. Nalwa, eds., Advances in Nanophase Materials and Nanothechnology, American Scientific Publishers Series, pp. 1-66.

  • 2002
    • Thean, V-Y. and Leburton, J.P., (2002), "Flash Memory: Toward Single Electronics," IEEE Potentials, Oct-Nov., pp. 35-41.

    • Sheng, Weidong and Leburton, J.P., (2002), "Anomalous Quantum Confined Stark Effect in Stacked InAs/GaAs Self-Assembled Quantum Dots," Physical Review Letters, 88, p. 167401.

  • 1999
    • Leburton, J.-P. (1999), "Photo-refractive Properties of GaAs and Superlattices," in J. Webster, ed., Encyclopedia of Electrical and Electronic Engineers, 16, pp. 366-377, Wiley Publishing Corporation.

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